Samsung has announced that it is now mass producing 4 Gb DDR3 memory modules. The memory sticks are manufactured using a 20 nm manufacturing process at Samsung. The South Korean manufacturer has announced that it was able to utilise currently available immersion ArF lithography techniques in order to achieve production using a 20 nm process. The manufacturing productivity for the 20 nm modules is 30 percent more than that of the older 25 nm modules. Samsung also mentioned that the 20 nm modules are 25 percent more efficient to older 25 nm DDR3 modules.
With the DRAM market set to grow to a value of $37.9 billion in 2014, Samsung is ideally placed to consolidate its foothold in this segment with the 20 nm modules. Young-Hyun Jun, executive vice president, memory sales and marketing at Samsung, said that the main objective is to increase market base. “Samsung’s new energy-efficient 20-nanometer DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status. Samsung will continue to deliver next-generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers.”
