Samsung today announced that it has started mass production of the industry's first “through silicon via” (TSV) 128GB DDR4 memory modules for data centers and enterprise servers, it follows the introduction of the world's-first 64GB 3D TSV DDR4 DRAM last year. The company's latest TSV DRAM module brings the largest capacity and highest efficiency of any DRAM modules available today, claims Samsung, while promising superior performance and excellent reliability.
128GB TSV DDR4 memory module is made up of a total of 144 DDR chips that are arranged in 36 4GB DRAM packages, each package contains four 20nm 8GB chips that are assembled with TSV packaging technology. Instead of using wire bonding TSV packages have chip dies that are ground down to a few dozen micrometers and then pierced with fine holes to be vertically connected by electrodes passing through the holes as this allows for a major increase in signal transmission. This is what enables the new memory module to provide a low-power solution for next-generation servers and data centers reaching peak speeds of up to 2,400Mbps, that's nearly twice the performance with power usage being cut down by about 50%. Samsung will also introduce TSV DRAM modules that bring data transfer speeds of up to 2,667Mbps and 3,200Mbps to meet enterprise server needs.
