Samsung is on its way to increasing the memory density of its DRAM and NAND flash chips to “extreme levels,” the company confirmed today, three days ahead of the upcoming Samsung Memory Tech Day 2023 event.
It's no secret that Samsung has been developing solutions to increase memory density and storage capacities for SSDs. Earlier this year, the company explored the future of NAND at the China Flash Memory Market Summit, revealing its long-term plans to develop SSDs that can potentially have 1 petabyte (1PB) of storage, i.e., 1024 terabytes (TB) / 1 million gigabytes (GB).
Today, as Samsung Memory Tech Day 2023 in Silicon Valley draws near, Samsung Electronics President of Memory Business Jung-Bae Lee confirmed (via KED Global) that the company is looking for ways to implement DRAM modules with a capacity of up to 1TB. These 1TB modules will bring 1PB SSDs closer to realization.
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Samsung is expected to showcase its latest memory semiconductor technologies at Samsung Memory Tech Day 2023 on October 20. The event will take place in Silicon Valley.
Leading up to the event, Jung-Bae Lee said “The 11nm DRAM currently under development will achieve the industry's highest level of memory density.”
At present, the highest-density DRAM chip has 512GB. The solution was developed by Samsung in 2021. The company is now aiming to double that capacity to 1TB, and with new packaging technologies and smaller dies, storage solutions should achieve much greater capacities.
“We are developing the highest layer of the 9th-generation V-NAND that can be implemented in a double-stack structure,” confirmed the President of Memory Business.
These unprecedented memory solutions with improved capacities and speeds are being developed for hyperscale AI (artificial intelligence). On the consumer side, Samsung has just announced a new rugged and shock-resistant Portable SSD T9 with capacities of up to 4TB.
