Samsung is gearing up to take full advantage of the intense demand for high quality memory solutions due to the AI gold rush. It's already won a lot of praise for its new high-bandwidth memory products from the likes of NVIDIA, a market leader in AI semiconductors.
The company is now looking to expand its product suite to further cater to rising demand. To that end, Samsung is expected to introduce its 3D DRAM products by next year, to better compete against local rival SK Hynix and establish a leading position in the global AI chip market.
Samsung looking to dominate the AI memory chip segment
Samsung shared its 3D DRAM development roadmap last month. Cells are stacked vertically in a 3D DRAM, so this triples the capacity per unit, compared to the current method of stacking them horizontally. It's an approach that's similar to high-bandwidth memory.
An early version of its 3D DRAM is expected to be launched next year based on vertical channel transistor technology. The company is reportedly going to launch stacked DRAM, where all cells are piled up including the capacitor, in 2030.
3D DRAMs could enable Samsung to become the leader in the AI chip industry, taking the crown from SK Hynix, which currently boasts a 90% share in the global market for HBM and DRAM for AI applications. Even though it's believed to be working on the technology, SK Hynix hasn't shared any roadmap for 3D DRAM.
Samsung's looking to tap into an expanding global 3D DRAM market that's projected to grow to $100 billion by 2030. The market is currently in its infancy so it's possible that these numbers could be lower or even higher, with the latter being more likely, given the high demand for AI memory solutions.
