Samsung is now the memory industry's first company to push QLC (Quad-Level Cell) 9th-generation V-NAND into mass production. Samsung first announced its V9 QLC memory in August, and this week, the tech giant confirmed that the latest technology is hitting the conveyor belts.
This new technology entered mass production mere months after Samsung started manufacturing the industry's first Triple-Level Cell (TLC) 9th-generation V-NAND.
Samsung began churning out TLC V-NAND in April, but now the company is ready to mass-produce Quad-Level Cell (QLC) solutions, claiming that it aims to solidify its leadership in the high-capacity, high-performance NAND flash market.
Powerful memory for the AI era
9th-generation QLC V-NAND boasts an 86% increase in bit density compared to the previous V7 QLD solution. It has an I/O speed of up to 3.2GB/s and supports SLC/TLC buffering.
Samsung uses Designed Mold technology to adjust the spacing of Word Lines (WL) that operate the cells. This technology ensures uniformity and optimization of cell characteristics across and within layers.
Samsung's Channel Hole Etching technology was used to achieve the highest layer count in the industry. And Predictive Program technology is used to anticipate and control cell state changes to minimize unnecessary actions.
All this is expected to improve memory performance in the emerging AI era. Through 9th-generation QLC V-NAND, Samsung says it offers a “full lineup of advanced SSD solutions that address the needs of the AI era.”
