Samsung Semiconductor revealed a roadmap on the social media platform Weixin, confirming its plans for the next generation of UFS (Universal Flash Storage) solutions.
The roadmap states that Samsung intends to release UFS 4.0 4-lane CS next year before jumping to UFS 5.0 in 2027. According to Samsung Semiconductor, UFS 4.0 4-lane will improve speed from around 4GB/s to 8GB/s.
Meanwhile, the big UFS 5.0 update to Samsung non-volatile memory, set to be introduced in 2027, could increase speeds above 10GB/s.
Next-gen UFS to enter production this year
Samsung Semiconductor says it plans to start the mass production of UFS 4.0 4-lane solutions before 2025. The company underlined that UFS 4.0 4-lane memory combines two UFS controllers for increased sequential read speed.
The company says these advancements in UFS technology will improve loading times and on-device AI applications. Although Samsung hasn't revealed anything about which Galaxy devices might use UFS 4.0 4-lane first, it could be the Galaxy S25 series. UFS 5.0 could debut alongside the future Galaxy S27 lineup a few years later.
Samsung already plans more AI-based features for next-gen devices, with some AI tools possibly being offered through a paid model. Whether that will pan out remains to be determined, but either way, these AI advancements work hand-in-hand with faster mobile memory technologies
Editor's Note: Given this UFS roadmap, we're guessing the upcoming Galaxy Z Fold 6 and Z Flip 6 will use the same UFS 4.0 solution as the Galaxy S24 lineup, as UFS 4.0 4-lane likely won't be ready for mass production by the time the Z6 foldable series goes official this summer.
