The new chips are more power efficient and offer 23% higher performance than previous-generation DRAM chips. The South Korean firm said it made this technological leap was made possible by using high-κ material that increases cell capacitance. Samsung also used its proprietary technology to improve critical circuits.
The company's new DDR5 DRAM chips use advanced, multi-layer lithography for the industry's highest die density and offer a 20% higher wafer productivity. These chips are capable of a data transmission speed of up to 7.2Gbps, which is equivalent to processing two 30GB 4K movies in just one second.
Samsung will start the mass production of its 12nm-class DDR5 DRAM chips in early 2023. We can expect products based on these DRAM chips sometime in Q4 2023.
Jooyoung Lee, Executive VP of DRAM Product & Technology at Samsung Electronics, said, “Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM. With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.“
