Samsung, the world's biggest memory chip maker, has revealed that it will unveil the world's fastest and highest-capacity storage chips today. The company will unveil its new products, aligned with the AI boom, at the Flash Memory Summit (FMS) 2024 event in the USA.
Samsung's to bring new storage chips to support AI boom
At the Flash Memory Summit (FMS) 2024 event being held at the Mission City Ballroom in the Santa Clara Convention Center, USA, Samsung will unveil its new storage chips. The company's executives Hwaseok Oh, Taeksang Song, and Jim Elliot will delve into details of those chips and explain how memory chip technologies have paved the way in powering large-scale AI models.
PM1753
The South Korean firm's PM1753 chip is the industry's fastest 16-channel Gen 5 Triple-Level Cell (TLC) SSD. It has up to 1.7x faster performance compared to the previous version and 1.6x better efficiency. It supports the Security Protocol and Data Model (SPDM) v1.2 and the PCI IDE interface. It is designed to be used in servers used for Generative AI processing.
BM1743
The company's 128TB BM1743 SSD will be showcased at the event. It is the industry's largest Quad-Level Cell (QLC) SSD and has sequential read speeds of up to 7,500Mb/s and sequential write speeds of up to 3,000MB/s. Samsung claims it has 45% better power efficiency compared to its previous-generation SSD.
PM9D3a
For mainstream data centers, Samsung has designed the PM9D3a PCIe Gen 5.0 SSD with sequential read speeds of up to 12,000MB/s and sequential write speeds of up to 6,200MB/s. Samsung claims it is the industry's fastest 8-channel PCIe Gen 5.0 SSD.
PM9E1
Samsung's PM9E1 is a PCIe Gen 5.0 SSD for on-device AI processing. It offers up to 4TB of storage space and 50% improved power efficiency. It can achieve sequential read speeds of up to 14,500MB/s and sequential write speeds of up to 13,000MB/s.
V9 TLC V-NAND
Coming to the company's memory solutions, its V9 Triple-Level Cell (TLC) is the industry's first 9th Generation V-NAND chip that comes with up to 2TB capacity, which is a 54% increase in bit density compared to V8 TLC chips. It has the industry's smallest cell size and thinnest mold, according to Samsung. Its I/O speed is up to 3.2Gb/s
V9 QLD V-NAND
Its V9 Quad-Level Cell (QLC) is the industry's first 9th Generation V-NAND chip with up to 2TB capacity and I/O speed of up to 3.2Gb/s. Its bit density has increased by 86% compared to V7 QLC chips and has SLC/TLC buffering support.
CMM-D – DRAM
Samsung's CMM-D – DRAM Compute Express Link (CXL) memory module is made to provide scalable memory. It has up to 1TB DDR5 capacity and up to 26GB/s data transfer speeds. It uses the PCIe 5.0 standard, EDSFF (e3.5) form factor, and the CXL 2.0 interface.
CMM-H TM
The company also revealed its CMM-H TM, which is the industry's first tiered CXL memory module for the hypervisor. It has 1TB to 4TB capacity, CXL 2.0 Type 2 and PCIe 5.0 x16 interface options, and support for Virtualization Service Accelerator (VSA). It has memory optimization and tiering.
CMM-H PM
CMM-H PM is the industry's first SoC-based CXL persistent memory solution with 32GB LPDDR5 capacity and CXL 2.0 Type 3 and PCIe 5.0 x4 interface compatibility. It has the EDSFF (E3.L) form factory.
CMM-B CXL
Samsung's CMM-B CXL memory pooling appliance is for disaggregated architectures. It has up to 24TB CMM-D and hundreds of TBs of CMM-H capacity. It features up to 60GB/s data transfer speeds and compatibility with CXL 1.1 and CXL 2.0. It has up to 24x E3.S CMM PCIe 5.0 rack mountable 4U chassis.
